The vapor-liquid-solid process is a fundamental and widely used mechanism for the growth of nanowires. In this article, experimental observations have been carried out to explain the growth mechanism of silicon-based nanowires using a solid-bulk silicon source as unique precursor. The synthesis consisted of a thermal treatment at 900 degrees C under an Ar-H-2 atmosphere with a low residual O-2 concentration. The presence of SiO in gaseous phase, originated via the active oxidation of the Si substrate, is shown as the principal factor responsible for the nanowires growth, via a process commonly termed as solid-vapor-liquid-solid. (C) 2015 Elsevier B.V. All rights reserved.