We have grown Mn-doped ZnO (MZO) thin films on SiO2-glass, sapphire (Al2O3) and MgO (0 0 1) substrates for the substrate temperature (T-s) from room temperature (RI) to 550 degrees C, by using a radiofrequency (rf)-magnetron sputter deposition (off-axis) method with a Zn1-xMnxO (x approximate to 0.05) sintered target. X-ray diffraction (XRD) shows that MZO films are polycrystalline with hexagonal structure and have exceptionally alpha-axis predominant orientation for MgO at T-s above 400 degrees C, (1 1 0) on r-plane-cut Al2O3 at T-s above 150 degrees C and c-axis orientation otherwise. According to Rutherford backscattering spectroscopy (RBS) of 1.8 MeV He ions, Mn/Zn is 6% and the composition is nearly stoichiometric. MZO films have high resistivity (similar to 1 M Omega cm) and paramagnetism. It is found that for MZO films on SiO2, the XRD intensity decreases with increasing the deviation of lattice parameter of thin films from the bulk value. Optical properties and observations of lattice relaxation and resistivity modification by energetic ion impact are also described. (C) 2015 Elsevier B.V. All rights reserved.