Ambipolar thin-film transistors with hot-wire chemical vapor deposition prepared nanocrystalline silicon channel were reported in this article. Raman spectroscopy and Hall measurement were used to analysis the material properties of nanocrystalline silicon that prepared under different hydrogen flow ratios. The device quality including threshold voltage, subthreshold slope, on-off current ratio, and effective mobility in both n- and p-channels were also discussed. Finally, the best device showed a maximum effective mobility of 23.1 cm(2)/V s in n-channel and a maximum effective mobility of 6.75 cm(2)/V s in p-channel. (C) 2015 Elsevier B.V. All rights reserved.