The dependence of the electrical conductivity, sigma, on the hydrogen concentration and crystallographic orientation has been investigated using single crystals of HxV2O5, which were grown by the Bridgeman method and doped with hydrogen within the solid solubility in the alpha phase by the spillover technique. The temperature dependence of a showed the feature of diffusive hopping of thermally activated electrons above similar to 180 K and variable range hopping below similar to 180 K. The dependence of sigma on the crystallographic orientation was little different from that of V2O5. The change in sigma with the hydrogen concentration was not monotonic; sigma increases with x up to x similar or equal to 0.06, but decreases above x similar or equal to 0.06. This behaviour can be explained based on the competition between the increase in the carrier density and the depression of the mobility of carriers with increasing x.