A new type of silicon membrane structure was fabricated using wafer fusion bon ng an two-step electrochemical etch-stopping methods. An "active wafer" of p-type epi/n-type epi/p-type substrate was first eletrochemically etched to form a shallow cavity on the p-type epitaxial layer. Then, the cavity-formed side was fusionally bonded with p-type silicon "working wafer" and, afterwards, the p-type substrate of the active wafer part was removed by a second electrochemical etch-stopping leaving only the n-type membrane on the shallow cavity. Using the new membrane structure in mechanical sensors, more precise control of cavity depth and membrane thickness was achievable and the influence of crystalline imperfections on the sensing circuits located near the bonding seam was avoidable.