Applied Surface Science, Vol.359, 847-852, 2015
The properties of gallium oxide thin film grown by pulsed laser deposition Qian
Ga2O3 films were deposited on MgAl6O10(1 0 0) substrates by means of pulsed laser deposition (PLD). The influence of oxygen pressure on crystal quality, surface morphology and transmittance were investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM) and spectrophotometer. The results showed that the grain size increased, the surface roughness and FWHM of X-ray rocking curve reduced with the oxygen pressure decreasing. Furthermore, the photoluminescence spectra were recorded as a function of excitation power and temperature. A blue shift of the visible luminescence at higher excitation power was observed, indicating that donor-acceptor transitions were responsible for the visible emissions. The thermal quenching of the blue and green bands corresponded to the activation energies of 0.028 eV, 0.037 eV and 0.034 eV, respectively. (C) 2015 Elsevier B.V. All rights reserved.