Journal of Materials Science, Vol.29, No.7, 1879-1883, 1994
Growth and Characterization of Some I-III-Vi2 Compound Semiconductors
Single crystals of CulnS(2), CulnSe(2), CulnTe(2), CuGaS2, AgGaS2 CulnSSe, AgGaSSe have been grown by chemical vapour transport technique on the basis of a new general thermodynamical model which enables the minimum source temperature T-s, and the minimum deposition temperature, T-d, to be determined. X-ray analysis, X-ray photoelectron spectroscopic analysis, surface analysis, and microhardness studies have been carried out on the single crystals grown.