Very uniform and transparent zinc oxide thin films doped with aluminium and indium were fabricated by the dip-coating technique using solutions prepared by the ethanolamine method. As starting materials, zinc acetate and zinc n-propoxide were used. Zinc acetate and propoxide are soluble in Pr(i)OH in the presence of diethanolamine, although they are hardly soluble without the amine. The prepared solutions were very stable and suitable for dip-coating. Zinc oxide was crystallized by heating above 500-degrees-C, and doping of aluminium and indium retarded the crystallization. The electrical resistivity of the film was decreased by doping with aluminium and indium. The lowest resistivity of 2 x 10(-2) OMEGA cm was obtained by post-coating treatment in a nitrogen atmosphere.