Journal of Materials Science, Vol.30, No.3, 734-736, 1995
Crystallization Process on Amorphous Mg-Ga-Sn System
The crystallization processes on Mg81.09Ga18.91 and Mg80.50Ga17.76Sn1.67 amorphous samples were studied by means of X-ray diffraction and electrical resistivity isothermal measurements. A small amount of Sn added to the binary eutectic was found to modify the crystallization products and the evolution time. Crystallization activation energies were estimated.