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Journal of Materials Science, Vol.30, No.14, 3734-3745, 1995
Characterization of SiC Whiskers
The composition and microstructure of SiC whiskers from three different suppliers were studied to understand their physical and chemical properties. The following analytical meth ods were utilized : complete chemical analysis, morphological examination by scanning electron microscopy and by high-resolution transmission electron microscopy, selected-area electron diffraction, X-ray diffraction, and thermogravimetric analysis of the oxidation rate of the three SiC whiskers at 1050 degrees C in oxygen and at 1150 degrees C in air.