Undoped and sulfur doped amorphous cubic boron nitride (a-cBN) layers were deposited on to silicon substrates by reactive pulse plasma (RPP) method. Subsequently they were annealed at 475, 500 and 700 K for 1 h in pure nitrogen atmosphere. In this study structural and electronic properties of unannealed and annealed layers were investigated. The results show that a consequence of annealing is formation of microstructural stable nanocrystalline cubic boron nitride film as well as substitutional location of introduced in situ donor impurities. This resulted in creation of a-cBN (n-type)-Si(p-type) heterojunction.