SIC matrix was deposited into porous carbon from a gas system SiCl4-CH4-H-2 in the temperature range 900-1200 degrees C using pressure-pulsed chemical vapour infiltration (PCVI) process. At 1000 degrees C, silicon single phase, a mixed phase of (Si + SiC), and SiC single phase, were detected by X-ray diffractions for specimens obtained with the reaction time per pulse of similar to 1, 2-3, and similar to 5 s, respectively. At 1100 degrees C, SiC single phase was obtained with a reaction time of only 0.3 s. Between 1050 and 1075 degrees C, deposition rate accelerated suddenly. The increase of SiCl4 concentration increased the deposition rate linearly up to 4%-6%. The residual porosity decreased from 29% to 6% after 2 x 10(4) pulses of CVI at 1100 degrees C, and the flexural strength was 110 MPa.