Pb(Zn1/3Nb2/3)O-3 thick films with the perovskite structure were prepared by the sol-gel method. Niobium ethoxide Nb(OC2H5)(4), lead acetate Pb(CH3COO)(2), and Zinc 2-ethylhexanoate Zn(O2C8H15)(2) were reacted in 2-methoxyethanol to form the precursor. Titanium isopropoxide, Ti(O . i-C3H7)(4) and barium isopropoxide Ba(O . i-C3H7)(4) were added into the precursor solution to stabilize the formation of the perovskite phase. Films of upto 10 mu m thickness were obtained by controling the viscosity of the solution and the dipping speed of silicon wafers. The phase evolution was investigated using differential thermal analysis (DTA) and X-ray diffraction techniques. The thickness-dependent dielectric constant of the resultant films is also reported.