This paper discusses two brand-new patterning methods for solar cell front metallization by using a layer of amorphous silicon (a-Si) and the laser processed patterning process. These methods have the advantages of simplicity, rapidity, and low cost for the mass production of plated solar cells and also have the potential to overcome the shortcomings of the existing complex processes for Ni/Cu plated cells. In this paper, we reveal the processes and show the metallization performance. The patterning results were disclosed and had the line width of about 45 mu m in our experiment. The specific contact resistivity ((c)) between plated Ni and silicon wafer exceeded the order of 10(-4)cm(2). In addition, the patterning mechanisms are also proposed and discussed. Copyright (c) 2015 John Wiley & Sons, Ltd.