The results of a study of the distribution of growth dislocations revealed on different faces of L-arginine phosphate monohydrate (LAP) crystals by selective etching in relation to the growth conditions of the crystals are described. It was found that (1) the dislocation density, rho, on a face is the highest in its central regions and depends on the supersaturation used for growth, and that (2) rho on different faces is different. The observations are discussed from the standpoint of the mechanism of generation of dislocations at the seed-crystal interface in the initial stages of regeneration of the seed and at the crystal-medium interface due to the formation of bunches of growth layers on the growing crystal faces during their development.