The energy flux in bipolar semiconductors is investigated taking into account the influence of recombination on it. The general expression of an energy flux in a nondegenerate semiconductor is obtained in a linear approximation with respect to perturbation taking into account recombination (the presence of nonequilibrium charge carriers in the semiconductor) and thermal electrical currents of electrons and holes. The energy flux density has been calculated in two different cases, the case of weak recombination and the case of strong recombination, for a one-dimension case. (C) 2015 Elsevier Ltd. All rights reserved.