International Journal of Hydrogen Energy, Vol.40, No.35, 11756-11761, 2015
Highly sensitive dual-FET hydrogen gas sensors with a surface modified gate electrode
Low-power dual-PET type H-2 sensors were fabricated, and surface modification techniques were developed to control the morphology of the catalytic metal gate. The differential outputs between the sensing PET and the reference PET were preserved even under a thermal change (from 50 degrees C to 150 degrees C) due to the same dependence of the electrical characteristics. The proposed sensor design showed low power consumption (45.5 mW 150 degrees C) by complete heat isolation. The sensors gave stable responses to H-2 gas over a wide temperature range, and the temperature of optimal response in micro-heater operation was approximately 150 degrees C. The surface of the catalytic metal gate was modified with solution based methods using a poly-styrene (PS) nano-beads suspension. The maximum drain current changes of the FET sensors with a nano-bumpy Pd film and a flat-surface Pd film were 164.6 mu A and 128.2 mu A to 5000 ppm hydrogen, respectively. The gas sensing characteristics of the PET sensor with the nano-bumpy Pd film were much higher than those of the PET sensor with the thin film due to the nano-porosity of the catalytic metal film. Copyright (C) 2015, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
Keywords:Hydrogen;Gas sensor;Field effect transistor (FET);Catalytic metal gate;Surface modification