Thin boron films were produced on Si substrates from a solid boron source and a hydrogen plasma. The plasma was generated using a 13.56 MHz generator and films were deposited with a forward radio frequency (RF) power of 2.0 kW. At pressures from 0.931-2.26 x 10(2) Pa under high hydrogen concentrations a capacitively coupled plasma (CCP) was observed whereas at low hydrogen concentrations an inductively coupled plasma (ICP) was observed. The films were predominantly deposited with an ICP but in one case a film was deposited using a CCP discharge. The deposited films consisted primarily of boron, but they also contained oxygen and silicon. The films were amorphous at 225 and 350 degrees C, but revealed X-ray diffractions at 475 degrees C. It was concluded that the hydrogen concentration, RF plasma power and surface temperature as well as the plasma-boron source interactions strongly influenced the film thickness and composition.