화학공학소재연구정보센터
Journal of Materials Science, Vol.32, No.14, 3765-3768, 1997
Crystal-Growth of Selected II-VI Semiconducting Alloys by Directional Solidification .1. Ground-Based Experiments
A series of Hg0.84Zn0.16Te crystal ingots have been grown from pseudobinary melts by the Bridgman-Stockbarger type directional solidification using a Marshall Space Flight Center/Space Science Laboratory heat-pipe furnace and the ground control experiment laboratory furnace of the crystal growth furnace which was flown on the first United States Microgravity Mission. A number of translation rates and a series of hot- and cold-zone temperatures were employed to assess the influence of growth parameters on the crystal properties for the purpose of optimizing the in-flight growth conditions.