The influence of order degree of amorphous germanium (a-Ge) on metal induced crystallization (MIC) of a-Ge was explored. Prior to the WC process, a pre-annealing step was employed to slightly increase the order degree of a-Ge. The pre-annealing process did indeed contribute to the crystalline ratio but tended to result in multi-preferential orientations, as evidenced by XRD curves showing both broad (111) and (220) peaks. By contrast, applying just the MIC process led to the observation of a single (111) orientation. This conflict prevented mutual diffusion between Ge and Al, reducing the effect of MIC. Due to this behavior, Al was left on the surface and formed interesting patterns. (C) 2015 Elsevier B.V. All rights reserved,