In this paper, the authors reported on the growth of InAs/GaAsSb type-II superlattice materials on InAs substrates. The lattice mismatch between the T2SL materials and the InAs substrates was tuned by varying As beam equivalent pressure and thus the As composition in GaAsSb. The lattice mismatch was as small as -6.5 x 10(-5) when As BEP was 8.0 x 10(-6) Torr. T2SL materials with different InAs thicknesses were then grown and characterized by high resolution X-ray diffraction. The results showed that the lattice mismatch of the superlattices to the InAs substrates was insensitive to the InAs layer thickness in each period. Finally, a P-I-N InAs/GaAsSb T2SL photodiode was grown on an InAs substrate. The photodiode with 14 ML InAs and 7 ML GaAsSb in each period showed a 100% cutoff wavelength of 6.5 mu m at 77 K. The dark current density at -30 mV bias was 6.05 x 10(-5) A/cm(2) and the resistance-area product at zero bias (R(0)A) was 435 Omega cm(2). The black body detectivity and peak detectivity were 1.34 x 10(11) cm Hz(1/2)/W and 3.72 x 10(11) cm Hz(1/2)/W, respectively. The quantum efficiency at 5.0 mu m was measured to be 28%. (C) 2015 Published by Elsevier B.V.