The relationship between In incorporation in InGaN/GaN quantum wells (QWs) and the plane orientation was investigated by using eight different GaN substrates, including non polar, semi polar and polar planes. Applying simultaneous metalorganic vapor phase epitaxial (MOVPE) growth, a series of InGaN-based LEDs was fabricated on various planar GaN substrates and variations in In content in QWs, surface morphology and electroluminescence peak wavelength were examined. Samples made with the semi polar (11 (2) over bar2) plane and the polar (0001) plane had the high In contents, while specimens incorporating the non polar (10 (1) over bar0) plane had the low In content. The In content was most readily increased in the QWs produced using (11 (2) over bar2), (0001), (10 (1) over bar1) and (10 (1) over bar0) planes, and the surface morphologies of samples made on the (0001), (11 (2) over bar2), (20 (2) over bar1) and (20 (2) over bar(1) over bar) planes were smoother than those of samples fabricated on the other planes. (C) 2015 Published by Elsevier B.V.