Surface morphology of homoepitaxial GaN (0001) grown by metalorganic vapor phase epitaxy was studied. Selective growth was observed on the homoepitaxial GaN layer grown on as received GaN substrate and was attributed to the existence of substrate surface defects. The steps were pinned by defects and meandered. Due to the pinning effect, the step pattern developed to a wavy surface with a strip-like feature along the [11 ($) over bar0] direction during the subsequent growth of a thick n-GaN layer. Because of the surface undulations, the emission of InGaN/GaN multiple quantum wells grown on the n-GaN layer was inhomogeneous. The surface defects on GaN substrate could be removed by dry etching and the homoepitaxial layer on the etched substrate showed a smooth morphology and straight atomic steps. As a result, the emission of the InGaN/GaN MQWs became homogeneous. (C) 2015 Elsevier B.V. All rights reserved.