Previous Article Next Article Table of Contents Journal of Crystal Growth, Vol.418, 185-185, 2015 DOI10.1016/j.jcrysgro.2015.02.088 Export Citation Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy (vol 407, pg 68, 2014) Ju GX, Fuchi S, Tabuchi M, Amanoa H, Takeda Y Please enable JavaScript to view the comments powered by Disqus.
