The increase of InN growth rate by a newly developed two-step precursor generation hydride vapor phase epitaxy (HVPE) was investigated for the preparation of freestanding InN and InGaN substrates. An elevated growth rate was achieved by the complete conversion of InCl generated in the first source zone to InCl3 in the second source zone, by the supply of additional Cl-2. The growth rate reached 12.4 mu m/h at a growth temperature of 600 degrees C, and the rate was observed to decrease above this temperature. Specular lnN layers grown at 650 degrees C exhibited a sharp room temperature photoluminescence peak at 0.73 eV with a bulk electron concentration of 1.2 x 10(18) cm(-3). (C) 2015 Elsevier B.V. All rights reserved.