High-quality Cu(2)ZriSn(SxSe1-x)(4)(CZTS(x)Se(1-x)) single crystals were grown by the traveling heater method (THN1), which is an example of a solution growth process. The CZTS(x)Se(1-x) solute-Sn solvent pseudobinary system was investigated and the ranges of growth temperature and quantity of solvent were determined for THN1 growth. The CZTS(x)Se(1-x) Sel single crystals were obtained from a 70-80 mol% CZTS(x)Se(1-x), solution at growth temperature 900 degrees C and speed 4-5 mmiclay. The structural and compositional analyses of the grown single crystals were carried out by powder X-ray diffraction, Raman spectroscopy and electron probe microanalysis. The grown crystals were kesterite and nearly stoichiometric with slightly Cu poor and Zn-rich despite the excess Sn used as the solvent. As the sulfur content x increases, the carrier concentration increases slightly but systematically between 2 x 10(17) and 3 x 10(17) cm(-3) while the mobility decreases from 35.1 to 104 cm(2) V-1 s(-1). These data provide references for the results of characterization on thin film samples as well as giving insight into the defect equilibrium and resulting quantities such as doping and mobility affecting device performance. Published by Elsevier B.V.