We describe surface patterning as a method to obtain discrete regions of different local miscut angles, delta, in semipolar (20 (2) over bar1) GaN substrates. During patterning the region angle (5 was varied between 0 degrees and +/- 2 degrees with respect to the growth plane. We chose two nonequivalent miscut directions: a <(1) over bar2 (1) over bar0 > and c' <(1) over bar 01 (1) over bar > On such patterned substrates InxGa1-xN/GaN quantum wells were grown by a Metalorganic Vapor Phase Epitaxy method. Angled regions were not planarized during growth and their initial miscut angles remained. We studied structural, morphological and optical properties of InxGa1-xN/GaN quantum wells as a function of delta. The intended In concentration, x, was about 13% on exact oriented (2021) planes. For miscut towards the a-direction, indium content decreases and luminescence energy increases with delta. For miscut towards c', we observe quite different behaviors, indium content and quantum well width are constant and luminescence energy increases with delta. We propose the explanation of these effects on the basis of sample morphology, In-content and built-in electric field. The obtained results are important for understanding the role of miscut (intentional and unintentional) in basic properties of semipolar InGaN/GaN quantum well structures. It is also worth to note that, the spectral width of luminescence was the smallest for regions miscut 2 degrees towards c' direction, which can be important for semipolar optoelectronic devices. (C) 2015 Elsevier B.V. All rights reserved.