N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (R-c) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest R-c (6.5 x 10(-5) Omega cm(2)) was obtained in the case of the ZuTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low R-c. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 urn was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZuTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low R-c of the ZnTe contact and Pd/Pt/Au electrode combination. (C) 2015 Elsevier B.V. All rights reserved.