화학공학소재연구정보센터
Journal of Crystal Growth, Vol.425, 255-257, 2015
Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys
Highly mismatched CaN1-xSbx alloys were grown under N-rich conditions at low substrate temperatures (325-550 degrees C) at a growth rates of similar to 0.09 mu m/hr on sapphire. The alloys ranged in Sb composition from 0% to 16%, with the bandgap shifting from 3.3 to 1.6 eV in accordance with the band anticrossing (BAC) model. We compare these results to growths from another chamber, having a different N source, and using a faster growth rate (similar to 0.24 mu m/hr), much lower substrate temperatures (as low as 80 degrees C), different III/V ratios and absolute fluxes. Despite the range of morphologies obtained, all alloys follow the predictions of the BAC model with the bandgap only depending on the Sb composition. Published by Elsevier BM.