We investigate stacked structures of InAs/AlAsSbilnP quantum dots using temperature- and power-dependent photoluminescence. The band gap of lnAs/AlAsSb QDs is 0.73 eV at room temperature, which is close to the ideal case for intermediate band solar cells. As the number of quantum dot layers is increased, the photoluminescence undergoes a blue-shift due to the effects of accumulated compressive strain. This PL red shift can be counteracted using thin layers of AlAs to compensate the strain. We also derive thermal activation energies for this exotic quantum dot system. (C) 2015 Elsevier B.V. All rights reserved.