We report on the development of a metamorphic In0.53Ga0.47As-based heterostructure grown on 300 mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a Metal-Oxide-Semiconductor Capacitor (MOSCAP) with C-V characteristics and interfacial trap density (D-it) values comparable to those of an equivalent structure grown on an InP substrate. A 1.15 mu m thick GaAs/InP buffer with a defect density in the low 10(9) cm(-2) range and a surface roughness rms value < 2 nm was used to accommodate the large lattice mismatch between In0.53Ga0.47As and Si. (C) 2015 Elsevier B.V. All rights reserved.