Lead telluride (PbTe) undoped films with various thicknesses (40-1800 nm) were grown by pulsed laser deposition (PLD) on different single crystal substrates (KCl, Si) and at different substrate temperatures (30 degrees C, 200 degrees C). Structural and electrical investigations of the so-obtained films have been carried out. The growth conditions leading to the films having different properties that could be controlled in a possibly wide range were identified. The film crystal structure varied from pseudo-amorphous to a highly ordered one. The films exhibited semiconducting behavior except the case of the thinnest, metallic-like layers. Electrical transport properties of the films with different structural quality were affected by changes of the grain boundary-related potential barrier height whereas donor level-related activation energies remained unchanged. (C) 2015 Elsevier B.V. All rights reserved.