A Lead-free ferroelectric CaBi2Nb2O9 (CBNO) thin film was deposited on Si substrate by pulsed laser deposition. TiO2 buffer layer was employed and Pt electrode was used for nano-scale capacitor. The x-ray diffraction reveals that the CBNO thin film has highly a-oriented polycrystalline structure. The highly a-oriented polycrystalline CBNO thin film significantly exhibit the enhanced ferroelectric property with a remnant polarization of 10 mu C/cm(2) compared to other values reported previously. In particular, the highly a-oriented polycrystalline CBNO thin film show faster ferroelectric switching characteristics than the epitaxially c-oriented CBNO thin film. (C) 2015 Elsevier B.V. All rights reserved.