A model is proposed by which pore interconnection during firing is responsible for short circuits in thin films. According to this model, the number of short-circuited electrodes can be decreased significantly by suppressing the pore growth, which is achieved by optimizing the hydrolysis conditions of the coating solution and the rapid thermal annealing of the film. At the same time, it became clear that a sol-gel-derived thin film essentially involves a short-circuit probability. The dielectric properties obtained were epsilon = 188 and tan delta = 8% when fired at 800 degrees C, for example.