A low-firing microwave dielectric ceramic Ba2BiV3O11 was prepared via solid-state reaction method. Ba2BiV3O11 ceramic could be well sintered at 840 degrees C-880 degrees C, with a epsilon(r) similar to 14.2, a high Qxf value similar to 68700GHz (at 8.7GHz), and a negative temperature coefficient of -81ppm/degrees C. (f) of Ba2BiV3O11 was tuned to be near zero by formation of a composite with TiO2. 0.7Ba(2)BiV(3)O(11)-0.3TiO(2) ceramic sintered at 910 degrees C showed improved properties with epsilon(r)=15.7, Qxf=53200GHz, and (f)=-2ppm/degrees C.