Tungsten-doped SnO2 (WTO) thin films with a given thickness of about 300nm have been prepared by magnetron sputtering with a substrate temperature in the range 400 degrees C-700 degrees C. The effects of substrate temperature on the structural, optical, and electrical properties and of WTO thin films have been investigated. A texture transition from (1 1 0) to (2 1 1) crystallographic orientations has experimentally been found by X-ray diffraction measurements as substrate temperature is raised. It was found that all thin films showed smooth surface with no cracks and high transparency (>85%) with the optical band gap ranging from 4.22 to 4.32eV. The mobility varied from 12.89 to 22.48cm(2)(V center dot s)(-1) without reducing the achieved high carrier concentration of about 1.6x10(20)cm(-3). Such an increase in mobility is shown to be clearly associated with the development of (2 0 0) but concurrent degradation of (1 1 0) in WTO thin films.