Due to its transparency, high hardness, and low density, single-crystal silicon carbide (SC-SiC) is a candidate material for transparent armor and bullet-proof windows. This manuscript explores the fracture anisotropy of the basal plane of two common HCP polytypes: 4H-SiC and 6H-SiC. Through single indentation, sequential indentation, and theoretical calculations, the primary and secondary cleavage directions are shown to be < 1120 > and < 1010 >, respectively. It is also shown that no appreciable tertiary cleavage direction exists on the basal plane. This investigation is the first to report how single-crystal silicon carbide responds to multiple indentation. The results have fundamental value in modeling its fracture behavior.