Interficial reaction products of 800 degrees C heat-treated SiCf/Ti43Al9V are studied. EDS mapping indicates two layers existence in the interface with different element enrichment. Raman line scanning along interface also shows two layers with TiCx next to SiC fiber and Ti2AlC next to matrix. Excess carbon throughout the interface and accumulation in TiCx layer is confirmed by Raman. FWHH of both D and G peaks indicate carbon in Ti2AlC layer is more disordered than that in TiCx layer. According to G peak and I(D)/I(G), carbon in interface can be assigned to disordered carbon with perfect graphene units size (L-a) stays around 0.7-0.9nm. Raman peaks of Ti2AlC vary with same trend throughout Ti2AlC layer is detected, and Raman spectra of Ti2AlC near TiCx layer is different from that near TiAl matrix, which results from residual stress and TiC intergrowth with Ti2AlC due to lack of Al.