We investigate the exchange bias (EB) phenomenon in the layered manganese oxychalcogenides La2O3Mn2Se2. The spin canting of the antiferromagnetic (AFM) background leads to the ferromagnetic (FM) contribution and the exchange coupling at the FM/AFM interface is responsible for the EB phenomenon. Due to the subtle equilibrium of the magnetic states, the EB field shows strong temperature and cooling field H-FC dependences. These results suggest that the EB effect in La2O3Mn2Se2 could be tuned by H-FC and temperature, which is important for designing related devices.