Highly (100)-oriented 0.38Bi(Ni1/2Hf1/2)O-3-0.62PbTiO(3) relaxor-ferroelectric films were fabricated on Pt(111)/Ti/SiO2/Si(111) substrates by introducing a lead oxide seeding layer. A moderate relative permittivity (epsilon(r)7000-1000), a low dissipation factor (tan <5%), and strong relaxor-like behavior (=0.74) over a broad temperature region were observed. The energy storage density of approximately 45.1 +/- 2.3J/cm(3) was achieved for films with (100) preferential orientation, which is much higher than the value similar to 33.5 +/- 1.7J/cm(3) obtained from films with random orientation. Furthermore, the PbO-seeded films are more capable of providing larger piezoelectric response (similar to 113 +/- 10pm/V) compared to the films without seeds (similar to 85 +/- 8pm/V). These excellent features indicate that the highly (100)-oriented 0.38Bi(Ni1/2Hf1/2)O-3-0.62PbTiO(3) films could be promising candidates for applications in high-energy storage capacitors, high-performance MEMS devices, and particularly for potential applications in the next-generation integrated multifunctional piezoelectric energy harvesting and storage system.