The radiation damage response of Ti3SiC2 heated from 120 degrees C to 850 degrees C during 700 keV Si+ irradiation has been investigated. The samples were analyzed using glancing incidence Xray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy, and scanning electron microscopy. For the sample at 120 degrees C, irradiation results in a buildup of a heterogeneous surface and the formation of TiCx. Irradiation at 200 degrees C results in maximum microstrain, a maximum in the c lattice parameter, and the appearance of a beta phase in addition to the normal a phase of Ti3SiC2. A minimum in the observed damage level near the surface was seen for irradiation at a sample temperature of 300 degrees C but the damaged phase increases at higher temperatures. Differences between the present work and a previous C irradiation study have been ascribed to the enhanced Si defect transport at low temperatures.