Through the order-disorder transition process of zeolites, bismuth-doped zeolite-derived silica glasses with broadband near-infrared (NIR) photoluminescence have been successfully prepared by spark plasma sintering (SPS). The samples were characterized by X-ray diffraction, UV-vis, photoluminescence, and fluorescence lifetime. The results showed that as-prepared samples possessed favorable broadband NIR luminescence. The NIR emission (peaked at similar to 1140nm) intensity decreased with increasing the bismuth doping concentration when excited by 500 and 700nm. The tendency was different from the emissions (peaked at similar to 1240nm) excited by 800nm. In addition, the NIR fluorescence peaks of the fixed Bi concentration sample can be observed almost around 1140 or 1240nm when excited by different wavelengths from 500 to 950nm. These phenomena implied that the NIR emission peaked at different wavelengths may originate from different bismuth species. Three kinds of Bi active centers Bi+, Bi-0, and (Bi-2)(2-) were proposed to contribute to the NIR emission peaks at similar to 1140, 1240, and 1440nm, respectively. Interestingly, a broadband NIR emission peaked at 1207nm with a full-width at half maximum of 273nm was observed when excited by 600nm, whose intensity was stronger than that excited by 800nm. This property might be useful for broadband fiber amplifiers and tunable lasers.