- Previous Article
- Next Article
- Table of Contents
Journal of the Electrochemical Society, Vol.162, No.9, D427-D434, 2015
Effect of External Factors on Copper Filling in 3D Integrated Through-Silicon-Vias (TSVs)
Except for the internal factors such as properties of additives, adsorption or desorption mechanism, the external factors such as forced convection and environment temperature play an important role in achieving the void-free copper filling. In this paper, the effect of the external factors on the 3D integrated Cu-TSVs filling was investigated. For large dimension via (empty set 50 mu m x 150 mu m, AR similar to 3), forced convection factor decreases the via filling efficiency due to the convection-dependent adsorption (CDA) effect. While for the relatively small dimension via (empty set 20 mu m x 120 mu m, AR similar to 6), a modest forced convection is vitally necessary for the void-free filling. Too low or too high convection rate would cause voids during filling due to the lack of accelerator replenishment in the via bottom or the existence of the beak structure in the via opening, respectively. The inactive behavior of accelerator is the main reason for the filling model changes from V-shape model to the near-ideal bottom-up filling model. With an increase of the electrolyte temperature, elastic modulus of Cu-TSVs decreases sharply, while the hardness varies slightly. The hardness of the Cu-TSVs plated in a large range of electrolyte temperature (4-45 degrees C) is significantly higher than that of the bulk copper. (C) 2015 The Electrochemical Society. All rights reserved.