Materials Chemistry and Physics, Vol.169, 6-12, 2016
Modification of photosensing property of CdS-Bi2S3 bi-layer by thermal annealing and swift heavy ion irradiation
The CdS-Bi2S3 bi-layer thin films have been deposited on Indium Tin Oxide (ITO) glass substrates at room temperature by Chemical Bath Deposition Technique (CBD) and bi-layer thin films were annealed in air atmosphere for 1 h at 250 degrees C. The air annealed sample was irradiated using Au9+ ions at the fluence 5 x 10(11) ion/cm(2) with 120 MeV energy. Effects of Swift Heavy Ion (SHI) irradiation on CdS-Bi2S3 bi-layer thin films were studied. The results are explained on the basis annealing and high electronic excitation, using X-ray diffraction (XRD), Selective Electron Area Diffraction (SEAD), Atomic Force Microscopy (AFM), Raman Spectroscopy, UV spectroscopy and I-V characteristics. The photosensing property after illumination of visible light over the samples is studied. These as-deposited, annealed and irradiated bi-layer thin films are used to sense visible light at room temperature. (C) 2015 Elsevier B.V. All rights reserved.