0.9Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) (PMN-PT 90/10) relaxor ferroelectric thin films with different thicknesses were deposited on the LaNiO3/Si (100) by the radio-frequency (RF) magnetron sputtering technique. The effects of thickness and deposition temperature on the microstructure, dielectric properties and the energy-storage performance of the thin films were investigated in detail. X-ray diffraction spectra indicated that the thin films had crystallized into a pure perovskite phase with a (100)preferred orientation after annealed at 700 degrees C. Moreover, all the PMN-PT 90/10 thin films showed the uniform and crack-free surface microstructure. As a result, a larger recoverable energy density of 31.3J/cm(3) was achieved in the 750-nm-thick film under 2640 kV/cm at room temperature. Thus, PMN-PT 90/10 relaxor thin films are the promising candidate for energy-storage capacitor application. (C) 2015 Elsevier Ltd. All rights reserved.