The ternary Al2xIn2-2xO3 films with different compositions x[Al/(Al + In) atomic ratio] have been fabricated on the MgO (1 0 0) substrates by the metal organic chemical vapor deposition (MOCVD) method. The influence of different Al contents on the structural, optical and electrical properties of Al2xIn2-2xO3 films has been studied. The structural studies reveal a change from single crystalline structure of cubic In2O3 to amorphous as the Al content increases. The average transmittances of all samples in the visible range are over 80%. The optical band gap is observed to increase monotonically from 3.67 to 5.38 eV as the Al content increases from 0.1 to 0.9. (C) 2015 Elsevier Ltd. All rights reserved.