A novel BaZnSnO semiconductor is fabricated using solution process and the influence of Ba addition on the structure, the chemical state of oxygen and electrical performance of BaZnSnO thin films are investigated. A high performance BaZnSnO-based thin film transistor with 15 mol% Ba is obtained, showing a saturation mobility of 1.94 cm(2)/Vs, a threshold voltage of 3.6V, an on/off current ratio of 6.2 x 10(6), a subthreshold swing of 0.94V/decade, and a good bias stability. Transistors with solution processed BaZnSnO films are promising candidates for the development of future large-area, low-cost and high-performance electronic devices. (C) 2015 Elsevier Ltd. All rights reserved.