High (111) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlOx interlayer. To improve the quality of poly-Ge film, the ratio of thicknesses of Al and a-Ge was adjusted. Electron backscattered diffraction (EBSD) results revealed that the (111) fraction of poly-Ge film reached 97% and the average crystal grain size surpassed 100 mu m. (C) 2015 Elsevier Ltd. All rights reserved.