A light-emitting diode (LED) using polyaniline (PAni) as transparent hole-injector electrode was fabricated. The PAni layer was deposited "in situ" onto indium-tin oxide (ITO) coated glass and over it a layer of non-conjugated polymer precursor of poly(p-phenylene vinylene) (PPV) was spin-coated. The low temperature thermal conversion was used to convert the precursor into the PPV layer. This (ITO/PAni/PPV/Al) LED structure exhibited an operation voltage 3 times lower when compared with the conventional (ITO/PPV/Al) structure. The low temperature conversion procedure opens the possibility of using PPV as active layer in heterostructures devices leading to enhancement of their optical and the electrical properties.