Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.13, No.23, 1694-1696, 1994 DOI10.1007/BF00451743 Export Citation Studies on Deep Levels in GaAs Epilayers Grown on Si by Metal-Organic Chemical-Vapor-Deposition .2. 1.13 eV Photoluminescence Emission Zhao JL, Gao Y, Liu XY, Su XA, Huang SH, Yu JQ, Liang JC, Gao HK Keywords:EPITAXIAL GAAS;DEFECTS Please enable JavaScript to view the comments powered by Disqus.
